Structural Phase Transition in InSb under Pressure
スポンサーリンク
概要
- 論文の詳細を見る
The crystal energies of InSb as a function of the atomic volume are calcttlatedfor the ZnS, Nail, CsC1 and 7-Sn structures, by rneans of the structural expan-sion method taken up to the third order terms int<>account. The Topp-Ilopfieldtype model potentials fitted to the atomic energy clata are used, It is shown thatthe eneruv or the metastable Nail structure is lower than that or the 7r-sn struc-lure, and that the ZnS structure does transform not to the NaCI, but to the 7-Snstructure under pressure. It is suggested that the brand structure of InSb with theNail structure is of a metallic character. These results are in agreement withexperiment. The dependences of the electrostatic part and the band structurepart in the crystal energy on the axial ratio of the: /?-Sn structure are discussed.
- 社団法人日本物理学会の論文
- 1981-07-15
著者
-
Kobayasi Teiji
College Of Medical Sciences Tohoku University
-
Shindo Koichi
College Of Humanities And Social Sciences Iwate University
-
Nara Hisashi
Physics Department College Of Arts And Sceinces Tohoku University
-
Shindo Koichi
College Of Humanities And Social Science
-
KOBAYASHI Teiji
College of Medical Sceinces,Tohoku University
-
Kobayashi Teiji
College Of Medical Sceinces Tohoku University
-
Kobayasi Teiji
College of Medical Sceinces,Tohoku University
関連論文
- Structural Phase Transitions and Equations of State of Se and Te under High Pressure
- The Band Structure of Solid Iodine under Pressure and the Mechanism of the Pressure-Induced Insulator-to-Metal Transition
- The APW Band Calculation of Cs_3Sb
- Strucrural Stability and Band Structure of the Mentallic Phase of Phosphorus
- Angle-Resolved Photoemission from a Cu(111) Surface : PHOTOEMISSION (MAINLY UPS AND XPS)
- Theory of Extended Pseudopotentials
- A Pressure-Induced Isostructural Transition in Black Phosphorus
- The Equation of State of Xenon under High Pressure
- Pressure Dependence of Energy Gap in CsI Crystal
- Calculation of the Electronic Structure of Positive Muon and Boron at the Tetrahedral Interstitial Site in Silicon
- On Metallization of CsI under Pressure
- High Pressure Phase of Arsenic and Antimony
- The Electronic Structure of Compounds under Pressure
- Pressure-Induced NaCl and β-Sn Structures of InSb
- Replica Exchange MC Simulations of the Two-Dimensional Site-Random Ising Model
- Electronic Structure of Black Phosphorus in Self-Consistent Pseudopotential Approach
- The Effective Mass Equation for the Multi-Valley Semiconductors
- Structural Phase Transition in InSb under Pressure
- The Transverse Effective Charge of the IV-VI Compound Semiconductors
- Local Field Correction and Acoustic Sum Rule for Si and Ge
- Nonlocal Pseudopotentials of Si and Ge
- Pseudopotential Approach to Anisotropies of Compton-Profiles of Si and Ge