The Role of Dislocation as Sinks for H Centers in LiF

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概要

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• The effect of γ-irradiation at liquid nitrogen temperature on the low temperature internal friction of compressed LiF crystals was studied by the ultrasonic pulse method at a frequency of 10 MHz. The internal friction is increased substantially in compressed LiF after a 5.8×10^6 rdosage of γ-rays at liquid nitrogen temperature. It was noted that this enhanced internal friction decreases during isochronal annealing at a low linear rate between 83 K to 110 K. The kinetics of this annealing process is analyzed. It is concluded that a fraction of the H centers introduced in LiF by the γ-irradiation diffuse to dislocations with a migration activation energy of 0.138±0.004 eV. The H center appears to pin the dislocation in the temperature region between 83 K and 110 K.

• 社団法人日本物理学会の論文
• 1974-05-15

著者

• Yabe Masaya

  Willian Marsh Rice University:central Research Laboratory Fuji Electric Co. :(present Address) Fuji

関連論文

• The Role of Dislocation as Sinks for H Centers in LiF

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