Magnetic and Electrical Properties of Impurity Doped HgCr_2Se_4

概要

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Measurements of the magnetic properties and the electrical properties (the electrical resistivity, the Hall effect and the magnetoresistance effect) were performed on hot pressed polycrystalline samples of Hg_<1-x>Ag_xCr_2Se_4(0≤x≤0.0155) and of Hg_<1-y>In_yCr_2Se_4(0≤y≤0.02). It was found that the Curie temperature of Hg_<1-x>Ag_xCr_2Se_4 increased as the amount of the Ag deoant increased, whereas the Curie temperature of Hg_<1-y>In_yCr_2Se_4 decreased with increasing concentration of the In dopant. The In-doped HgCr_2Se_4 showed a high resistivity, a large Hall effect, and a large negative magnetoresistance effect; the Ag-doped Hg Cr_2Se_4 showed a low resistivity, a small Hall effect and a small critical scattering of positive magnetoresistance. The different effects of the dopants. Ag and In, on the properties of HgCr_2Se_4 which were studied is satisfactorily explained by the change in carrier concentration produced by the dopants.
社団法人日本物理学会の論文
1971-07-05