Electrical Properties of n- and p-Type Gallium Arsenide

概要

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Measurements of transport properties are reported on n-type GaAs with carrier concentrations of ∼10^<14>cm^<-3> and ∼10^<15>cm^<-3> and on p-type GaAs with carrier concentration of ∼10^<16>cm^<-3> converted from n-GaAs by heat treatments. The Hall coefficient and the resistivity have been measured as functions of temperature from 53°K to 400°K for n- and p-type samples and the resistivity has been measured as a function of hydrostatic pressure up to 15Kbar for n-type samples. The variations in the carrier concentration are explained by the presence of non-shallow donors of ionization energy ∼(0.2+1.05×10^<-5>P(bar))eV and ∼(0.14+1.2×10^<-5>P(bar))eV in n-GaAs, and that of non-shallow acceptors having ionization energy of 0.12eV in p-GaAs, For n-GaAs, scatterings due to polar mode, ionized impurities and "space charge" regions produced by inhomogeneities play important roles in determining the mobility. For p-GaAs, polar optical mode scattering is the most dominant scattering mechanism and deformation potential and ionized impurity scatterings are possibly effective.
社団法人日本物理学会の論文
1968-10-05