Physical Mechanisms in Electron Doped High T_c Systems
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概要
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Electronic st?rtes of' electron doped high T. ttuaterial Nd3 .Ce..CtrOj have been iravestigated indetail based on the restrlts of detailed barad calctrlation perf'orrtaed in previotrs ptrblications. Itis proposed tluat a coznplicated tntrlti-iunjctmrit.y' st?rte with one hole arad two electrons is realizedin the similar sense as in Sl'l1S and ELlB6 sttrdied bef'ore by [18. This sittration is naost clearlyseen 111 the photoeuaaissiott naeastrrezaaent, trnd xxariotrs ataounalies due to txvo carriers are wellexplained selfconsistently. Ira partictr1?tr, the strpercondtrcting character is essentially the sautue218 the oxrerdojced regiota of L;x? .Sr.CtrO? , where the pair xvave ftrnction f'or the p?rired naaagraeticpolaron is thottglat to be predoraain?trat1y .s-claaracter.
- 社団法人日本物理学会の論文
- 1999-03-15
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