Binding Energy of the Electron-Hole Liquid in Type-II (GaAs)_m/(AlAs)_m Quantum Wells

スポンサーリンク

概要

• 論文の詳細を見る

• The binding energy of quasi-two-dimensional electron-hole liquid (EHL) at zero temperature is calculated for type-II (GaAs)_m/(AlAs)_m (5 ≤m ≤13) quantum wells (QWs). The correlation energy is evaluated by adopting a random phase approximation of Hubbard. For comparison, we calculate the binding energy of EHL for type-I (GaAs)_m/(AlAs)_m (14 ≤m ≤20) QWs. It is demonstrated that the EHL in type-II GaAs/AlAs QWs is more stable state than exciton and biexciton at high excitation density, while the EHL is unstable in type-I GaAs/AlAs QWs.AR10

• 社団法人日本物理学会の論文
• 2003-06-15

著者

• Inagaki Akira

  School Of Materials Science Japan Advanced Institute Of Science And Technology

関連論文

• Binding Energy of the Electron-Hole Liquid in Type-II (GaAs)_m/(AlAs)_m Quantum Wells

スポンサーリンク