Effect of Doping on the Electron Spin Resonance in Phosphorus Doped Silicon. II

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概要

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• Electron spin resonance experiments were carried out at room and liquid nitrogen temperatures on n-type silicon doped with various amounts of phosphorus. A single absorption line was observed, its g-value and line width being funcitons of the donor concentration. At room temperature, the g-value and line width vary monotonically with the donor concentration, while at liquid nitrogen temperature, these resonance parameters change their dependence at a certain donor concentration. The change in the behavior was considered to have a connection with the transition from localized to nonlocalized state, the onset of degeneracy and impurlty band conduction. The experimental results were analyzed by the existing theories of the electron spin resonace of conduction electrons. Qualitative agreement with the theory was found, which would be a confirmation of the model that the observed electron spin resonance is related with the electrical conduction.

• 一般社団法人日本物理学会の論文
• 1966-06-05

著者

• Kodera H.

  Central Research Laboratory, Hitachi Ltd.

関連論文

• Constitutional Supercooling during the Crystal Growth of Germanium and Silicon
• Precipitation of Antimony in Heavily Doped Silicon Identified by X-ray Microanalyzer
• Effect of Doping on the Electron Spin Resonance in Phosphorus Doped Silicon. II

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