Galvanomagnetic Effects in Cadmium Antimonide
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概要
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Galvanomagnetic effects were measured on p- and n-CdSb single crystals above 77°K in weak magnetic fields (≦7500gauss). No anisotropy of the Hall coefficient was observed below 250°K. The Hall mobility at 200°K was 390, 250 and 650cm^2/v・sec for holes and 520, 440 and 560 cm^2/v・sec for electrons along the [100], [010] and [001]-directions, respectively. The mobility of holes along the [001]-direction was constant up to 3×10^<16>cm^<-3>. The anisotropy of the transverse magnetoresistance coefficient was faund to be larger for p- than for n-CdSb. The longitudinal magnetoresistance in n-CdSb does not vanish in any direction; in p-CdSb it does not vanish in the [100] and in the [010]-direclions. A four valley model is proposed for the valence band structure.
- 社団法人日本物理学会の論文
- 1966-12-05
著者
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Tanaka Tetsuro
Department Of Electronics Faculty Of Engineering Kyoto University
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KAWASAKI T.
Department of Electrical & Electronics Engineering, Oita University
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Kawasaki Tatsuo
Department Of Electronics Faculty Of Engineering Kyoto University
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Tanaka Tetsuro
Department Of Biopharmaceutics School Of Pharmacy Fukuyama University
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