Electrical Resistivity of Secondary Defects in Quenched Aluminum
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概要
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Electrical resistivities of secondary defects in quenched aluminum have been determined experimentally. The resistivity of a void is found to be proportional to the square of the void size and is obtained to be 2.5×10^<-12> s^2Ωcm^4, where s is the length of a side of the regular octahedral void. The stacking fault resistivity is (4.0±l.5)×10^<-13>Ωcm^2. The upper limit value of the dislocation resistivity is 1.5×10^<-19>Ωcm^3.
- 社団法人日本物理学会の論文
- 1965-09-05
著者
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Yamagata Toshihiro
Laboratory Of Crystal Physics Faculty Of Science Hiroshima University
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Yoshida Sho
Laboratory Of Crystal Physics Faculty Of Science Hiroshima University
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Kiritani Michio
Laboratory Of Crystal Physics Faculity Of Science Hiroshima University
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YOSHIDA Sho
Laboratory of Crystal Physics, Faculty of Science, Hiroshima University
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Kiritani Michio
Laboratory of Crystal Physics, Faculty of Science, Hiroshima University
関連論文
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- Formation of Dislocation Loops in Degassed and Quenched Aluminum
- Influence of Plastic Deformation on the Clustering of Quenched-in Vacancies in Aluminum
- Voids in Quenched Gold
- Shape of Voids in Quenched Aluminum
- Dislocation Loops with Stacking Fault in Quenched Aluminum
- Dislocation Loops Containing a Stacking Fault in Quenched Super-Pure Aluminum
- Nucleation and Growth of Voids in Quenched Aluminum
- Scattering of Electrons by Stacking Faults in Aluminum
- An Evidence of Voids in Quenched Aluminum
- New Type Dislocation Loops in Quenched Aluminum
- Formation of Dislocation Loops at Low Temperatures in Quenched Aluminum
- Heterogeneous Nucleation of Voids in Quenched Aluminum
- Formation of Double Layer Stacking Fault Dislocation Loops
- Effects of Atmospheres on the Formation of Secondary Defects in Quenched Pure Aluminum
- A New Type Aggregation of Quenched-in Vacancies in Aluminum
- Formation of Voids and Dislocation Loops in Quenched Aluminum
- Electrical Resistivity of Secondary Defects in Quenched Aluminum
- Influence of Plastic Deformation on the Clustering of Vacancies in Quenched Gold
- Impurity Substructure in Zinc Crystal Grown from the Melt