Theory of Electron Tunneling in Semiconductors (Direct Tunneling across p-n Junctions)

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概要

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• The time-dependent theory of the tunneling problem is developed for the ideal semiconductor junction with an inhomogeneous electric field. It is shown that the tunneling probability of Fredkin and Wannier type can be derived from the rigorous formula for transition probability between an incident and an outgoing wave packet. The tunneling probability of the final form is obtained by using the difference equation and the variation principle of Lippmann and Schwinger. The weak field approximation hitherto supposed is not used but a strong field approximation is taken on the junction potential. The result obtained resembles that of a free electron tunneling through one-dimensional barrier. The time-independent formulation is added in Appendix

• 社団法人日本物理学会の論文
• 1965-10-05

著者

• Takeuti Yosihisa

  Research Institute Of Electrical Communication Tohoku University

• FUNADA Hiroshi

  Research Institute of Electrical Communication, Tohoku University

• Funada Hiroshi

  Research Institute Of Electrical Communication Tohoku University

関連論文

• Simulation of Shapiro Steps in a Josephson Junction Based on the Microscopic Theory of the Tunnel Junction
• Submillimeter-Wave Response of Nb-YBaCuO Point-Contact Josephson Junctions : Electrical Properties of Condensed Matter
• Frequency Dependence of the Submillimeter-Wave Response in the Tunnel-Type and Bridge-Type Josephson Junctions
• Correlation between Types of Junction and Submillimeter-Wave Responses in Point-Contact Josephson Junctions
• Frequency Dependence of the ac Josephson Effect in Nb Point Contacts in the Submillimeter-Wave Region
• Theory of Electron Tunneling in Semiconductors (Direct Tunneling across p-n Junctions)

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