Electrical Properties of Semiconducting Compound CdIn_2Se_4
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概要
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The polycrystals were prepared from the melts of component elements, weighing Cd:In:Se=1:2:3.9〜4.5 in atomic percent. These crystals were confirmed by X-ray analysis using the diffractmeter that all specimens had the same crystal structure and were formed in one phase. It had the tetragonal (pseudo-cubic) structure of D^1_<2σ>-P4^^-2m as shown in Fig. 1 and the lattice constants were a=c=5,820 A. About the samples prepared from various specimens the electrical resistivity and Hall coefficiet were measured from 114°K to 650°K by the ordinary d.c. metbod. The sample container was filled with argon gas during the measurements. The results were shown in Fig. 2. The values of the electrical resistivity at room temperature differed extremely from specimen to specimen. The maximum resistivity was obtained for CdIn_2S_<4.1> and in either case of increasing or decreasing of selenium contens from that value, the resistivity falled. As the results of Hall measurement, it was found that any specimen shows n-type conduction and CdIn_2Se_<4.1> has the minimum carrier density. It might be probable that at the begining selenium exists in the form Se_<4.1> but during the fusion a small quantity of selenium are lost. Then the crystal obtained from the melt of the components weighed in the atomic ratio of CdIn_2Se_<4.1> might be formed into nearly stoichiometric composition. The specimens having the smaller contents of selenium than that of above composition might have some selenium vacancies, and the carrier densities of these specimens might be larger. While the specimens having the larger contents might have some interstitial selenium atoms, and in this case carrier densities might be larger too. It might be supposed that the disagreement of the slopes of resistivity curves in CdIn_2Se_<4.00> and CdIn_2Se_<4.5> at low temperature range is interpreted by the difference between the activation energy for selenium vacacy and that for interstitial Selenium atom. At higher temperature range. the electrical resistivity and Hall coefficient of the specimen CdIn_2Se_<4.0> had linear temperature dependences. Supposing that this range are intrinsic, we estimate the band gap at 1.54eV.
- 社団法人日本物理学会の論文
- 1964-06-05
社団法人日本物理学会 | 論文
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