原子層エピタキシーによるInAs/GaAsとGaP/GaAsヘテロ構造、歪超格子の成長機構の研究

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Abstract A self-limiting mechanism in atomic layer epitaxy (ALE) has been investigated for the heterostructures and superlattices of Ⅲ - V compounds. InAs/InAs(OO1), InAs/GaAs(OO1), GaAs/InAs(OO1), InxGa1-xAs/GaAs(OOl), GaP/GaP(OO1), and GaP/GaAs(OO1), (InAs)m(GaAs)n/GaAs(OO1) were grown by pulse-jet-epitaxy with trimethylgallium, trimethylindium, trisdimethylaminoarsine, trisdimethylaminophosophine, arsine and phosphine as source materials. The self-limiting mechanism was largely affected by lattice mismatch between epitaxial layer and the substrate and by an atomic level suface morphology. The incorporation of misfit dislocation at the heterointerface played an important role in the self-1limiting mechanism. The strained-layered superlattice of (InAs)m(GaAs)n enabled us to grow InGaAS Iayer with an effectively high indium composition.
宮崎大学の論文