イオンスパッタリングによる酸化物の X 線光電子ペクトルの変化

概要

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Round-robin experiments have been performed in order to establish the correction of binding energy shift of XPS spectra in oxides by the chargeup which results from the radiation of X-rays or ion sputtering and to determine the criteria for the change of chemical state by Ar ion sputtering. Samples of Al_2O_3, SiO_2, MgO, TiO_2 and NiO, in plate and powder form, were used for the experiments. We determined that the difference in energy between the Al2p (Si2p or Mg1s) line and the O1s line gives a better correction of the measurements of the binding energy shift of Al_2O_3 (SiO_2 or MgO) than that between the Al2p (Si2p or Mg1s) line and the C1s line. After Ar ion sputtering, TiO_2 and NiO are reduced and damage is induced in the case of Al_2O_3 and SiO_2, while MgO remains stable, as examined using the binding energy and FWHM of XPS spectra. We revealed that the changes caused by ion sputtering of oxides depend on the change of free formation enthalpy and the ionicity. We also showed that both plate and powder samples are useful as standards for determining the binding energy from XPS spectra.
社団法人日本鉄鋼協会の論文
1992-01-01