A Model for the Mechanism of Chlorinated Plasma Etching of Aluminium

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概要

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• A model microscopic etching of aluminium by chlorine plasma is proposed. It takes into account the contribution of spontaneous etching as well as the activation by ionic bombardment. The corresponding simulations predict, using a finite element method, the temporal and bidimensional topological evolution of aluminium profiles during etching. The predictions of the model are compared with micrographs of experimental microscopic aluminium profiles in different configurations, and this comparison reveals a very good agreement.

• 理論物理学刊行会の論文
• 2000-04-28

著者

• Baleo Jean-noel

  Ecole Des Mines De Nantes Department Systemes Energetiques Et Environnement

• VIGNES Marie-Josephe

  Ecole des Mines de Nantes, Department Systemes Energetiques et Environnement

• Vignes Marie-josephe

  Ecole Des Mines De Nantes Department Systemes Energetiques Et Environnement

関連論文

• Numerical Simulation of the Spatial Distribution of Mean Residence Time in Complex Flows through Porous Media
• A Model for the Mechanism of Chlorinated Plasma Etching of Aluminium

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