Distortion of Energy Surfaces by a Strain Field
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概要
- 論文の詳細を見る
Deformation of energy bands in solids in the presence of a strain field is discussed from a symmetry point of view. The very particular case of the conduction band of silicon in an orthorhombic strain is examined in some detail. The distortion of the energy surface in this case gives rise to an additional contribution to piezoresistance and predicts the correct sign and magnitude of the piezoresistance coefficient π_<44>, which has been predicted to vanish by the conventional electron transfer theory.
- 理論物理学刊行会の論文
- 1991-02-05
著者
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SUZUKI Katuhisa
Tokyo Metropolitan Institute of Technology
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Suzuki K
Stefan Meyer Institute For Subatomic Physics Austrian Academy Of Sciences
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SUZUKI Katsuhiko
Numazu College of Technology
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SUZUKI Kenji
Department of Physics, Kyushu Institute of Technology
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SUZUKI Kenji
Department of Physics, Faculty of Engineering, Kyushu Institute of Technology
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SUZUKI Katsuo
Department of Electric, Electronics, and Computer Engineering, Waseda University
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SUZUKI Katsuhiko
Department of Physics, Tokyo Metropolitan University
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Suzuki Kenji
Researoh Center for Electron Photon Science,Tohoku University
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