InAs and GaAs quantum dots grown by hyperthermal source beams

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概要

• 論文の詳細を見る

• Abstract A growth method which uses group Ⅲ (triisopropylindium and triisobutylgallium) and V (trisdimethylarsenic) metalorganic molecules with hyperthermal energies has been developed for the growth of GaAs and InAs quantum dots. It grows uniform quantum dots with an extremely high density of 1 x10(14乗) cm(-2乗), which cannot be attained using Stranski-Krastanov (S-K) growih mode. GaAs and InAs quantum dots grown by this technique show a sharp and strong emission peak in the photoluminescence spectra, suggesting that the dots are very uniform in size and have good quality. It is demonstrated that the growth mechanism is quite different from that of the S-K growth mode.

• 宮崎大学の論文

著者

• Ozeki Masashi

  Department Of Electrical And Electronic Engineering University Of Miyazaki

• Ozeki Masashi

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Miyazaki University

• Shimizu Yuichiro

  Department of Electrical and electronic Engineering, Faculty of Engineering, Miyazaki University

• Shimizu Yuichiro

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Miyazaki University

• Shimizu Yuichiro

  Department Of Dental Materials And Technology School Of Dentistry Asahi University

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