CuInSe_2と薄膜型太陽電池への応用

概要

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High-efficiency, low-cost thin film compound solar cells are increasingly developing with advancing technologies and expanding global environmental needs. These devices are typically fabricated on poly-crystalline absorber layers with thicknesses in the 1-10μm range. CuInSe_2, being one of the Chalcopyrite-type semiconducting compounds, is the most promising material for absorber layers of thin film solar cells because of their high(>10^4 cm^<-1>) optical absorption coefficients and their versatile optical and electrical characteristics. Furthermore, CuInSe_2 indicates a suitable optical band gap of 1.04 eV, and the quaternary solid solution Cu(In, Ga)Se_2 absorbers provide gaps equal to the single junction optimum(1.4-1.5 eV). The film solar cells fabricated on such absorber layers have resulted in an active area efficiency of 16.9%. The electrical and optical properties of CuInSe_2 films are highly dependent on their composition, structure and defect chemistry, which are strongly related to the film-growth parameters. Therefore, the choice of preparation technique is important for obtaining compound films that can yield high efficiency solar cells. In this paper, we will briefly review the recent development of CuInSe_2 thin film solar cells focusing on the preparation technologies used for the formation of CuInSe_2 thin films with solar cell quality.
東海大学の論文
1994-03-30