AP-CVD 炉内粒子のウエーハ表面付着低減方法に関する研究

概要

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This paper deals with a reducing method of the adhering particles onto wafers in an AP-CVD reactor. In the semiconductor fabricating process, the particle contaminant adhering on wafers governs the product yield of semiconductor devices. Especially, AP-CVD (Atmospheric Pressure Chemical Vapor Deposition) is the highest particle contaminant generator among the process equipments, due to its chemical reaction at atmospheric pressure. To study the particle reducing method, emission sources of the particles were investigated, and it was found that grape-like flake torn from inner wall surface of the reactor by transient air blast was the most probable source. A cooling wall method was examined to reduce the flake torn off, and its effect was experimentally assured. For confirmation of this reduction in the actual process, a few of examinations with a large number of wafers were carried out and statistically, the effectiveness was assured. The reason is assumed that liquid bridge between the flakes due to adsorpption of H_2O vapor in the reactor enhances the opposite force against the transient air blast.
湘南工科大学の論文
1992-03-31