FeSi2合金ターゲットを用いたレーザーアブレーション法による環境考慮型半導体β-FeSi2薄膜の作製とその微細構造

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Iron disilicide thin films were prepared by pulsed laser deposition on Si（100）substrates using a FeSi_2 alloy target． Droplet－free films could be deposited at a fluence between 2 J／cm2 and 4 J／cm 2 using the l93 nm laser． Polycrystal films ofβ-FeSi_2 phase could be formed even at a substrate temperature of 20℃． In addition to theβ-FeSi_2 phase， the FeSi phase was observed for substrate temperatures between 400℃ and 600℃． This is attributed to the mobility enhancement of Si atoms． At 700℃，the FeSi phase disappeared andβ-FeSi_2 single phase films having columnar structure were grown due to the mobility enhancement of both the Fe and Si atoms． At the substrate temperatures of less than 600℃，the lattices ofβ-FeSi_2 were constricted due to containing many defects． At more than 700℃，they approached to the bulk values due to these defects being released． The films deposited at m6re than 700℃were grown epitaxially on Si（100） with the relation ofβ一FeSi2（041）or（O14）llSi（220）at the beginning of deposition． As the film thickness increases， the epitaxial growth becomes disordered and finally becomes non－oriellted near the film surface． For all films deposited at the various substrate temperatures， the stoichmetry was constant in the depth direction． Thus， it is suggested that Si atoms from the substrate hardly diffused into the film． The generation　of iron desilicides in PLD method is also discussed．
九州大学の論文
1999-12-30

FeSi2合金ターゲットを用いたレーザーアブレーション法による環境考慮型半導体β-FeSi2薄膜の作製とその微細構造

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