Derivation of Effective Noise Suppression Factor of Si-Photodiodes at Low Frequencies
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概要
- 論文の詳細を見る
For reverse-biased junction photodiodes, an effective noise suppression factor, Γ^2_<eff>, is proposed and formulated as a practical measure of noise. This factor is defined by the ratio of the noise associated with the total current through the device to that current multiplied by 2q (q : electronic charge) and is expressed by Γ^2_<eff>=1-n(1-Γ^2). Here, n is the ratio of the current from carriers optically generated within the depletion region to the total current including diffusion component, and Γ^2 is the noise suppression factor related solely to the current from carriers generated within the depletion region. To check the validity of this idea, the noise for Si pn and pin photodiodes were measured and Γ^2_<eff> for each type of photodiode was determined, resulting in good agreement with the theoretical predictions.
- 東海大学の論文
著者
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Takano Hiroaki
Course Of Electronics School Of Engineering Tokai University
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Niikura Y
Course Of Electronics School Of Engineering Tokai University
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Niikura Yuichiro
Course of Electronics, School of Engineering, Tokai University
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Yamagata Masanori
Course of Electronics, School of Engineering, Tokai University
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Yamagata Masanori
Course Of Electronics School Of Engineering Tokai University