DC and High-Frequency Characteristics of GaN Schottky Varactors for Frequency Multiplication
スポンサーリンク
概要
- 論文の詳細を見る
The design, fabrication and characterization of GaN based varactor diodes are presented. MOCVD was used for layer growth and the DC characteristic of 4µm diameter diodes showed a turn-on voltage of 0.5V, a breakdown voltage of 21V and a modulation ratio of 1.63. High frequency characterization allowed obtaining the diode equivalent circuit and observed the bias dependence of the series resistance. The diode cutoff frequency was 900GHz. A large-signal model was developed for the diode and the device power performance was evaluated. A power of 7.2dBm with an efficiency of 16.6% was predicted for 47GHz to 94GHz doubling.
- The Institute of Electronics, Information and Communication Engineersの論文
- 2012-08-01
著者
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CONSIDINE Laurence
the Institute of Electronics, Microelectronics and Nanotechnology, (IEMN)
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JIN Chong
the Institute of Electronics, Microelectronics and Nanotechnology, (IEMN)
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PAVLIDIS Dimitris
the Institute of Electronics, Microelectronics and Nanotechnology, (IEMN)