Enhanced Photocurrent in Rh-Substituted \alpha-Fe2O3 Thin Films Grown by Pulsed Laser Deposition

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概要

• 論文の詳細を見る

• Rh-substituted \alpha-Fe2O3 (Fe2-xRhxO3; 0.0\leq x\leq 2.0) thin films were grown on \alpha-Al2O3(110) substrates with a Ta-doped SnO2 electrode layer by pulsed laser deposition. Highly oriented epitaxial films with pure corundum structures were successfully fabricated over the entire compositional range. The optical absorption spectra of the films indicate narrowing of the bandgap with increasing Rh content. Consequently, the photoelectrochemical performance was improved in the Rh-substituted films. We found that the optimum Rh content lies at around x=0.2, where the photocurrent is significantly enhanced over a wavelength range of 340--850 nm.

• 2012-11-25

著者

• TABATA Hitoshi

  Department of Bioengineering, School of Engineering, University of Tokyo

• Seki Munetoshi

  Department Of Electrical Engineering And Information Systems Graduate School Of Engineering Universi

• Seki Munetoshi

  Department of Electrical Engineering and Information Systems, Graduate School of Engineering, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

• Yamahara Hiroyasu

  Department of Bioengineering, Graduate School of Engineering, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

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