A 50ns Verify Speed in Resistive Random Access Memory by Using a Write Resistance Tracking Circuit

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概要

• 論文の詳細を見る

• This paper proposes a write resistance tracking circuit (WRTC) to improve the memory window of HfOx-based resistive memory. With a 50-ns single voltage pulse, the minimal resistance of the high resistance state in the 1-kb array of resistive switching elements can increase from 25kΩ to 65kΩ by using the proposed verify circuit. The WRTC uses the transition current detection method based on the feedback of the memory cell to control the write driver. The WRTC achieves distinct bistable resistance states, avoids the occurrence of over-RESET, and enhances the memory window of the RRAM cell.

• 2012-06-01

著者

• Lo Yu-lung

  Department Of Electrical Engineering National Central University

• Cheng Kuo-hsing

  Department Of Electrical Engineering National Central University

• Chen Pang-shiu

  Department Of Materials Science And Engineering Mingshin University Of Science & Technology

• CHEN Yu-Sheng

  Industrial Technology Research Institute (ITRI)

• SHEU Shyh-Shyuan

  Department of Electrical Engineering, National Central University

• TSAI Ming-Jinn

  Industrial Technology Research Institute (ITRI)

• CHEN Pang-Shiu

  Department of Chemical and Materials Engineering, MingShin University of Science & Technology

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• A 50ns Verify Speed in Resistive Random Access Memory by Using a Write Resistance Tracking Circuit

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