気相分解/誘導結合プラズマ質量分析法を用いたシリコンウェハー表面金属分析による超純水水質評価

概要

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Along with the shrinkage of LSI geometries, a higher quality of ultrapure water has been continuously required. Analytical technology for ultrapure water has also progressed before ultrapure water production technology improvements. In this study, we performed optimization of the analytical conditions for the direct analysis of acid droplets, and established an analytical technology for measurements of trace amounts of metallic impurities deposited on a wafer surface by means of Vapor Phase Decomposition (VPD)/Inductively Coupled Plasma Mass Spectrometry (ICP-MS). As a result, analytical technology for metallic elements of the 1 × 108 atoms/cm2 level on wafer surface has been established. By applying analytical technology to the wafer that has been contacted with ultrapure water, a new evaluation technology for ultrapure water quality by means of wafer surface contamination has been established. We confirmed good correlations between metal contamination of the wafer surface and the concentration in ultrapure water. This new quality evaluation technology is expected to contribute a further improvement of ultrapure water for future LSI manufacturing.
社団法人　日本分析化学会の論文
2010-07-05