Physical Properties of p-Type Tin Monoxide Films Deposited at Low Temperature by Radio Frequency Magnetron Sputtering

概要

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SnO films were fabricated at low temperature (60--220 °C) by rf magnetron sputtering. X-ray diffractometry and scanning electron microscopy revealed that the films contained polycrystalline SnO nanorods several tens of nanometers long and SnO<sub>2</sub> was present in films grown at ${\geq}180$ °C, suggesting the decomposition of SnO by disproportionation. Photoacoustic and transmittance spectroscopies revealed an indirect fundamental gap of 0.7 eV and a direct gap of ${\sim}2.9$ eV, respectively. Thermoelectric and Hall measurements both indicated that films grown at ${\leq}180$ °C exhibited p-type conductivity. The electrical and optical properties of the films are rationalized by considering the structural changes caused by disproportionation.
2011-07-25