Air-Gap Capacitance--Voltage Analyses of p-InP Surfaces Covered with Natural Oxide
スポンサーリンク
概要
- 論文の詳細を見る
Air-gap capacitance--voltage ($C$--$V$) characteristics of p-InP surfaces covered with natural oxide and treated with hydrogen--fluoride (HF) acid are reported for the first time. These surfaces show deep-depletion $C$--$V$ behavior with large and distinctive hysteresis. To interpret the obtained $C$--$V$ curves, a model was used that introduced a donor-like discrete level in the band-gap. Another assumption in this model is that the capture velocity of the discrete level and/or the generation--recombination rate of the minority carrier of the substrate is very low. By use of this model, the measured air-gap $C$--$V$ curve was successfully reproduced.
- 2010-11-25
論文 | ランダム
- 動物実験の手技 顎顔面領域の仮骨延長法
- 41. 顎矯正手術に対する自己血輸血についての臨床統計的観察(第 59 回九州歯科学会総会講演抄録)
- 41 顎矯正手術に対する自己血輸血についての臨床統計的観察
- P-9 矯正患者における初診時の口腔機能に対する意識調査(第31回福岡歯科大学学会総会抄録)
- P-5 矯正治療患者の初診時におけるブラッシングに対する意識調査(第31回福岡歯科大学学会総会抄録)