Air-Gap Capacitance--Voltage Analyses of p-InP Surfaces Covered with Natural Oxide

概要

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Air-gap capacitance--voltage ($C$--$V$) characteristics of p-InP surfaces covered with natural oxide and treated with hydrogen--fluoride (HF) acid are reported for the first time. These surfaces show deep-depletion $C$--$V$ behavior with large and distinctive hysteresis. To interpret the obtained $C$--$V$ curves, a model was used that introduced a donor-like discrete level in the band-gap. Another assumption in this model is that the capture velocity of the discrete level and/or the generation--recombination rate of the minority carrier of the substrate is very low. By use of this model, the measured air-gap $C$--$V$ curve was successfully reproduced.
2010-11-25