Patterning of Organic Semiconductors on Silicon Oxide Using an Atomic Force Microscope with an Alternating-Current Electric Field

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概要

• 論文の詳細を見る

• The patterning of $\alpha$-sexithiophene was performed on a SiO2 surface using an atomic force microscope (AFM). The $\alpha$-sexithiophene molecules, which were coated on the AFM tip by thermal evaporation, were transferred to the SiO2 surface when a sinusoidal bias voltage with an amplitude of 100 V offset by a 50 V voltage was applied to the Si substrate at a frequency of 300 Hz with respect to the back side of the AFM cantilever. The patterning could be started and stopped by controlling the bias voltage.

• Japan Society of Applied Physicsの論文
• 2009-11-25

著者

• Kimura Ryota

  Division Of Materials Physics Graduate School Of Engineering Science Osaka University

• Tada Hirokazu

  Division Of Materials Physics Graduate School Of Engineering Science Osaka University

• Yamada Ryo

  Division of Materials Physics, Graduate School of Engineering Science, Osaka University, Toyonaka, O

• Yamada Ryo

  Division Of Materials Physics Graduate School Of Engineering Science Osaka University

関連論文

• Patterning of Organic Semiconductors on Silicon Oxide Using an Atomic Force Microscope with an Alternating-Current Electric Field
• Electrostatic Properties of Organic Monolayers on Silicon Oxides Studied by Kelvin Probe Force Microscopy

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