IEEE/IFIP NOMS 2010 Towards Management of Future Networks and Services : 2010年4月19日-23日大阪国際会議場(グランキューブ大阪)(大阪府大阪市)
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- 2010-09-15
論文 | ランダム
- Trade-Off Relationship between Si Recess and Defect Density Formed by Plasma-Induced Damage in Planar Metal--Oxide--Semiconductor Field-Effect Transistors and the Optimization Methodology
- Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature-Controlled Photoreflectance Spectroscopy
- Si Recess of Polycrystalline Silicon Gate Etching: Damage Enhanced by Ion Assisted Oxygen Diffusion
- 25 nm Wide Silicon Trench Fabrication by Edge Lithography
- Estimation of Ion/Radical Flux from Mask Selectivity and Etching Rate Calibrated by Topography Simulation