A High-Efficient Transformer Using Bond Wires for Si RF IC

スポンサーリンク

概要

• 論文の詳細を見る

• This paper presents a design of a monolithic transformer using bond wires. The proposed transformer structure has several advantages such as high power handling and high efficiency. It shows that the measured insertion loss at the 1.9GHz range is -1.54dB (70%), which is higher than the spiral transformer of the same size. Also, it shows a phase error of less than 1 degree.

• （社）電子情報通信学会の論文
• 2010-01-01

著者

• Lee Sungho

  Seoul National University

• Nam Sangwook

  Seoul National University

• CHO Eunil

  Seoul National University

• LEE Jaejun

  Seoul National University

• Nam Sangwook

  Seoul National Univ.

• Lee Jaejun

  Seoul National Univ.

関連論文

• A 0.1-1GHz CMOS Variable Gain Amplifier Using Wideband Negative Capacitance
• A High-Efficient Transformer Using Bond Wires for Si RF IC
• High Gain and Wide Range Time Amplifier Using Inverter Delay Chain in SR Latches
• A 2.3-7GHz CMOS High Gain LNA Using CS-CS Cascode with Coupling C
• A CMOS RF Power Detector Using an Improved Unbalanced Source Coupled Pair
• On-Chip Supply Noise Suppression Technique Using Active Inductor
• Design of Wideband Coupled Line DC Block with Compact Size

スポンサーリンク