A CMOS RF Power Detector Using an Improved Unbalanced Source Coupled Pair

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概要

• 論文の詳細を見る

• This paper presents the design of a CMOS RF Power Detector (PD) using 0.18µm standard CMOS technology. The PD is an improved unbalanced source coupled pair incorporating an output differential amplifier and sink current steering. It realizes an input detectable power range of -30 to -20dBm over 0.1-1GHz. Also it shows a maximum data rate of 30Mbps with 2pF output loading under OOK modulation. The overall current consumption is 1.9mA under a 1.5V supply.

• （社）電子情報通信学会の論文
• 2008-12-01

著者

• Nam Sangwook

  Seoul National University

• LEE Jaejun

  Seoul National University

• PARK Hangue

  Telecommunication R&D Center, Samsung Electronics Co., Ltd.

• Park Hangue

  Samsung Electronics Maetandong Kor

• LEE Jaechun

  Seoul National University

• Nam Sangwook

  Seoul National Univ.

• Lee Jaejun

  Seoul National Univ.

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