A CMOS Low Dropout Regulator with Extended Stable Region for the Effective Series Resistance of the Output Capacitor

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概要

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• In this paper, a new compensation scheme and a corre-sponding pass element structure for a CMOS low-dropout regulator (LDO) are presented. The proposed approach effectively alleviates the strict stability constraint on the ESR of the output capacitor. Stability of a CMOS LDO with the conventional compensation requires the effective series resistance (ESR) of the output capacitor in a tunnel-like region. With the proposed design approach, an LDO can be stable using an output capacitor without ESR. A 2.5V/150mA LDO has been implemented using a 0.5-μm 1P2M CMOS process. The experimental results illustrate that the proposed LDO is stable with an output capacitor of 0.33μF and no ESR.

• 2008-08-01

著者

• Chen Chern‐lin

  National Taiwan Univ. Taipei Twn

• Chen Chern-lin

  Graduate Institute Of Electronics Engineering And Department Of Electrical Engineering National Taiw

• PAN Hsuan-I

  Graduate Institute of Electronics Engineering and Department of Electrical Engineering, National Tai

• Pan Hsuan‐i

  National Taiwan Univ. Taipei Twn

• Pan Hsuan-i

  Graduate Institute Of Electronics Engineering And Department Of Electrical Engineering National Taiw

関連論文

• A CMOS Low Dropout Regulator with Extended Stable Region for the Effective Series Resistance of the Output Capacitor
• A 0.18μm Stability-Enhanced CMOS LDO with Robust Compensation Scheme

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