Low-Damage and High-Rate Sputtering of Silicon Surfaces by Ethanol Cluster Ion Beam

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概要

• 論文の詳細を見る

• To realize the high-rate and low-damage sputtering of a Si surface, the effect of irradiating an ethanol cluster ion beam on a Si surface was investigated. The sputtering depths in Si substrates induced by the ethanol cluster ion beam irradiation were larger than those in SiO2 substrates, which was due to a chemical sputtering effect. The lattice disorder and the surface roughness of the Si substrates decreased with increasing retarding voltage.

• Japan Society of Applied Physicsの論文
• 2009-01-25

著者

• TAKAOKA Gikan

  Photonics and Electronics Science and Engineering Center, Kyoto University

• Takaoka Gikan

  Photonics And Electronics Science And Engineering Center Kyoto University

• Ryuto Hiromichi

  Photonics And Electronics Science And Engineering Center Kyoto University

• SUGIYAMA Kazumichi

  Photonics and Electronics Science and Engineering Center, Kyoto University

• OZAKI Ryosuke

  Photonics and Electronics Science and Engineering Center, Kyoto University

• Ozaki Ryosuke

  Photonics And Electronics Science And Engineering Center Kyoto University

• Sugiyama Kazumichi

  Photonics And Electronics Science And Engineering Center Kyoto University

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