Magnetite Thin Films Containing a Small Amount of Ge
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概要
- 論文の詳細を見る
This paper investigates the crystal structure and magnetization of iron oxide thin film by rf sputtering with a composite target of Ge chips set on an Fe3O4 compound target. No substrate bias was applied and no oxygen was added to argon during deposition. Ge concentration in the films ranged from 0 to 14 at % with the use of different Ge chips. The X-ray diffraction result revealed that as-deposited films were structurally changed with respect to Ge concentration, and a magnetite film was successfully obtained at 5 at %Ge and room temperature, exhibiting ferrimagnetic behavior with magnetization of 3.5 kG at $8\times 10^{5}$ Am-1 (10 kOe).
- Japan Society of Applied Physicsの論文
- 2008-11-25
著者
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OHNUMA Shigehiro
The Research Institute for Electric and Magnetic Materials
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Abe Seishi
The Research Institute For Electric And Magnetic Materials
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