酸化物高温超電導テープのための面内配向Y_2O_3バッファー層の成膜
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概要
- 論文の詳細を見る
- 1997-11-18
論文 | ランダム
- Advanced SOI MOSFET's with Strained-Si/SiGe Heterostructures(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- Novel Fabrication Technique for Relaxed SiGe-on-Insulator Substrates without Thick SiGe Buffer Structures
- Strained-Si-on-Insulator (Strained-SOI) MOSFETs-Concept, Structures and Device Characteristics
- Formation of SiGe on Insulator Structure and Approach to Obtain Highly Strained Si Layer for MOSFETs
- A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100nm Strained Silicon-on-Insulator MOSFETs