Analysis of Low-Reflection Facet Film for Semiconductor Optical Amplifiers Using Ablation Etching

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概要

• 論文の詳細を見る

• The reflectivity of a facet film for semiconductor optical amplifiers (SOAs) has been analyzed using laser ablation etching, which changes the ripple of spectrum light. We propose a method of estimating the optimum thicknesses of TiO2 and SiO2 layers by observing the change in reflectivity after ablation etching. We used this method to estimate the optimum thicknesses and reduce reflectivity, while bringing the thicknesses close to their optimum values. Ablation etching is a promising technique for analyzing facet reflectivity after facet coating.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-09-15

著者

• Takeshita Tatsuya

  Ntt Photonics Laboratories Ntt Corporation

• Sugo Mitsuru

  Ntt Photonics Laboratories Ntt Corporation

• Kato Kazutoshi

  Ntt Photonics Laboratories Ntt Corporation

関連論文

• Analysis of Low-Reflection Facet Film for Semiconductor Optical Amplifiers Using Ablation Etching
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