Characteristics of Ultra Thin Hf-Silicate Gate Dielectrics on Si0.9954C0.0046/Si Heterolayers

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概要

• 論文の詳細を見る

• For the first time, the characteristics of ultrathin (capacitance equivalent thickness = ${\sim}1.4$ nm) Hf-silicate gate dielectrics deposited by RF sputtering on tensile-strained Si0.9954C0.0046 layers are investigated. The formation of Hf-silicate film is confirmed by X-ray photoelectron spectroscopy. The physical thickness of ${\sim}5.5$ nm is measured by high-resolution transmission electron microscopy and the effective dielectric constant of $\kappa$ ${\sim}15.5$ is calculated from the accumulation capacitance. The leakage current density of ${\sim}1\times 10^{-4}$ A/cm2 at $-2$ V is significantly decreased as compared with SiO2 for the same capacitance equivalent thickness.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-04-15

著者

• Maikap Sidhu

  Electronics Research & Service Organization Industrial Technology Research Institute

• Chen Pang-shiu

  Electronics Research & Service Organization Industrial Technology Research Institute

• Liu Kou-Chen

  Department of Electronics Engineering, Chang Gung University, Taiwan, R.O.C.

• Liu Kou-chen

  Department Of Electronics Engineering Chang Gung University

関連論文

• Characteristics of Ultra Thin Hf-Silicate Gate Dielectrics on Si0.9954C0.0046/Si Heterolayers

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