Fabrication of a Tantalum-Nitride Thin-Film Resistor with a Low-Variability Resistance

概要

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A tantalum-nitride thin-film resistor with a low-variability resistance was formed by optimizing the conditions for depositing a tantalum-nitride thin film. The thin film was deposited by RF-magnetron-reactive sputtering, and nitrogen-pressure ratio, substrate temperature, and deposition rate in the conditions were optimized by measuring electrical properties of the deposited film. Based on the measured resistivity and temperature coefficient of resistance, a nitrogen-pressure ratio of 6.0%, a substrate temperature of 350°C, and a deposition rate of 50 nm/min were chosen as the optimum conditions suitable for mass production of the film. The resistor using the thin film deposited under the optimum conditions was fabricated on a silicon optical bench, and showed that its change in resistance is less than 1.4% after conducting reliability tests, which consist of a high-temperature test, a damp-heat test, and a heat-cycle test. Furthermore, the reliability tests estimated that the change in resistance of the resistor would reach only 2.0% even if the 104-hour high-temperature test, which is the severest in three tests, is carried out. It is thus concluded from these results that fabrication under the optimized conditions can produce a thin-film resistor with a low-variability resistance.
社団法人電気学会の論文
2005-04-01