An Analytical Model of Short-Channel Effect for Metal–Oxide–Semiconductor Field-Effect Transistor with Insulated Shallow Extension

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概要

• 論文の詳細を見る

• In this paper, we present an analytical short-channel threshold voltage model without any fitting parameter for the metal–oxide–semiconductor field-effect Transistor (MOSFET) with insulated shallow extension (ISE). Excellent agreements between the numerical simulated results and this model are obtained. Very good suppression of the short-channel effect is observed for this ISE MOSFET. Both the sidewall-oxide thickness and shallow-extension depth play a major role in containing the short-channel effect. The threshold-voltage equation is found by using the effective-doping model. The effective doping is derived from the knowledge of the channel potential. The channel potential is obtained by the scale-length approach to solve 2D Poisson’s equation.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-12-15

著者

• CHEN Yi-Min

  Institute of Oceanography, National Taiwan University

• LIEN Chenhsin

  Institute of Electronics Engineering, National Tsing Hua University

• Chen Yi-min

  Institute Of Electronics Engineering National Tsing Hua University

• Lien Chenhsin

  Institute Of Electronics Engineering National Tsing Hua University

• Shih Chun-Hsing

  Department of Electrical Engineering, Yuan Ze University, Taoyuan 320, Taiwan, R.O.C.

• Shih Chun-hsing

  Department Of Electrical Engineering Yuan Ze University

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