Study on Spectral Response of GaAlAs/GaAs Staircase Band Gap Photodiodes
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概要
- 論文の詳細を見る
Three structures of a GaAlAs/GaAs staircase band gap photodiode have been fabricated and their spectral responses have been measured. The experimental results are almost consistent with the theoretical results except that the short-wavelength range expands more due to the electron diffusion current. Moreover, the spectral response of the three structures can be resolved into several peaks corresponding to the band gap of each GaAlAs active layer.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2004-11-15
著者
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Antarasena Choompol
Semiconductor Device Research Laboratory Department Of Electrical Engineering Faculty Of Engineering
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Wisetlakhorn Pakhawat
Semiconductor Device Research Laboratory, Department of Electrical Engineering, Faculty of Engineeri
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Thainoi Supachok
Semiconductor Device Research Laboratory, Department of Electrical Engineering, Faculty of Engineeri
-
Wisetlakhorn Pakhawat
Semiconductor Device Research Laboratory Department Of Electrical Engineering Faculty Of Engineering
-
Thainoi Supachok
Semiconductor Device Research Laboratory Department Of Electrical Engineering Faculty Of Engineering