Avalanche-Type High Sensitive Image Pickup Tube Using an a-Se Photoconductive Target

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概要

• 論文の詳細を見る

• The avalanche-type high sensitive image pickup tube using 8 μm thick a-Se layer was fabricated. The avalanche multiplication factor of photogenerated carriers was increased with increasing a target voltage. The quantum efficiency in an avalanche mode (target voltage: 880 V) was higher than that in a non-avalanche mode (target voltage: 500 V). Also the relative sensitivity in an avalanche mode at long wavelength was increased up to 620 nm by the increase of the photodetection efficiency. The dark current was suppressed under 0.3 nA at a target voltage of 820 V, and decay lag at the third field was 1.2%.

• Japan Society of Applied Physicsの論文
• 2003-03-01

著者

• Park Wug-dong

  Department Of Electronic Engineering Dongyang University

• Tanioka Kenkichi

  Advanced Broadcasting Devices Research Division Nhk Science And Technical Research Laboratories

• Tanioka Kenkichi

  Advanced Imaging Devices Research Division, NHK Science and Technical Research Laboratories, 1-10-11 Kinuta, Setagaya-Ku, Tokyo 157-8510, Japan

関連論文

• Avalanche-Type High Sensitive Image Pickup Tube Using an a-Se Photoconductive Target
• Avalanche Characteristics of the Te-Doped Amorphous Se Photoconductive Target for a Complementary Metal-Oxide-Semiconductor Image Sensor
• Spectral Responses of Te-Doped a-Se High-Gain Avalanche Rushing Amorphous Photoconductor (HARP) Films for a Solid State Image Sensor
• Dependence of Thickness on Avalanche Characteristics of Te-Doped Amorphous Selenium Photoconductive Target
• Avalanche-Type High Sensitive Image Pickup Tube Using an a-Se Photoconductive Target
• Spectral Responses of Te-Doped a-Se High-Gain Avalanche Rushing Amorphous Photoconductor (HARP) Films for a Solid State Image Sensor
• Avalanche-Type High Sensitive Image Pickup Tube Using an a-Se Photoconductive Target

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