イオン注入SiCのパルスレーザーアニールとレーザー同時照射による低損傷イオン注入

概要

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In order to decrease the annealing temperature of ion-implanted SiC and reduce accumulated damage in SiC during ion implantation, a non-thermal-equilibrium annealing process using a pulsed excimer laser and simultaneous excimer laser annealing during ion implantation (SLII) were carried out. Laser annealed and SLII SiC were characterized by Rutherford backscattering channeling measurement. When 3, 000 shots and 30, 000 shots of laser irradiation were performed, the χ values of the N+ implanted SiC were suppressed from 89% before irradiation to 44% and 24%, respectively. When 30, 000 shots and 300, 000 shots of laser irradiation were performed, the x values of the Al+ implanted layers were suppressed from 64% before irradiation to 20% and 10%, respectively. Laser annealing brought good results in reducing the annealing temperature and suppressing damage in the ion-implanted SiC. Similarly, the χ values of the N+ implanted layer were decreased from 6365% to 3.55.7% by SLII. SLII also proved to be effective for suppressing implantation-induced damage in SiC.
日本真空協会の論文
2001-04-20