Si, Ge蒸着層と下地原子層との界面反応

概要

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Semiconductor (Si and Ge) -metal alloy formation, semiconductor alloy film-metal interface states and intermixing phenomenon are investigated by atomic-resolution field ion microscopy (FIM). Silicon vapor-deposited onto a tungsten tip surface is very reactive on thermal heating at above 850 K, whereas germanium is less interactive than that of silicidation processes with the substrate tungsten atoms. Intermixing phenomenon of silicon and the W substrate is resulted locally after the silicon is vapor-deposited onto the tungsten tip on heating at around 1000-1100 K. Their atomic traces which indicate the intermixing phenomenon disappered completely after the topmost three atomic layers of the tungsten substrates were field-evaporated. The atomic depth of the silicide reaction is differ locally. For germanium films, extensively intermixing phenomenon such as that observed at silicon and tungsten interface however does not observed. A germanide film is formed by reacting with the topmost atomic layer of the W substrate surfaces and therefore consist of one monolayer.
日本真空協会の論文
2001-03-20