Gradation Stitching Exposure Performance in the Improvement of Dose Uniformity and Continuity at the Field Stitching Boundaries
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概要
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The effectiveness of gradation stitching exposure is demonstrated using a laboratory-built exposure system. After investigating convenient slit shapes, trapezoidal slits with an apex angle of 80° were adopted. From the viewpoints of ease of preventing corner rounding of exposure light flux and slit fabrication, trapezoidal slits were determined to be better than pentagonal slits. As the first experimental stage, exposure dose uniformity and continuity of the stitched parts are evaluated at the reticle plane in order to eliminate the complicated influence of the projection optics on patterns printed on wafers. Exposure and development of a special resist the dissolved depth of which after development changes almost linearly with the exposure dose is utilized for detecting partial irregular dose distribution in the narrow stitched parts. It is clarified that the dose inequality in the stitched parts is improved by adopting the gradation stitching exposure method. Moreover, by observing the line-and-space test pattern profiles and measuring the line pattern widths in the stitched parts, it is proved that the changes of top-view profiles and line widths are also very small and negligible. It will become difficult to develop a high-resolution projection optics with a large field for shorter wavelengths hereafter. Applying the gradation stitching exposure, large LSI chips will be replicated favorably by stitching two small scan fields. If a small field size is admissible, resolution and/or depth of focus will also be considerably improved.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-03-15
著者
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HORIUCHI Toshiyuki
Tokyo Denki University
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Horiuchi Toshiyuki
Tokyo Denki Univ. Tokyo Jpn
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Mochida Hiroyuki
Tokyo Denki University
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