Investigation of Precursors Formed by Mixing SiH2Cl2 with NH3 for Chemical Vapor Deposition of Silicon nitride Films

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概要

• 論文の詳細を見る

• Precursors for Silicon nitride films prepared by mixing SiH2Cl2 with NH3 were investigated by in situ Fourier-transform infrared spectroscopy (FT-IR) and mass spectrometry. The FT-IR spectral analysis results indicated that the Cl was removed from SiH2Cl2 by mixing SiH2Cl2 with NH3 at room temperature (R.T.). The analysis results also indicated the existence of radicals which had the chemical bond Si–N. The mass spectral analysis results indicated the existence of the radicals with the mass number of 45–47. From these results, it was concluded that the precursors of SiNH x for SiN films were formed by mixing SiH2Cl2 with NH3.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 1997-01-15

著者

• Ohnishi Hiroshi

  Manufacturing Engineering Center Mitsubishi Electric Corporation

• Ohnishi Hiroshi

  Manufacturing Development Laboratory Mitsubishi Electric Corp.

• KUSAKABE Yoshihiko

  Manufacturing Development Laboratory, Mitsubishi Electric Corp.

• Komori Hideki

  Manufacturing Engineering Center Mitsubishi Electric Corp.

• Hanaoka Ken-ichi

  Manufacturing Engineering Center Mitsubishi Electric Corp.

• Yamanishi Ken-ichiro

  Manufacturing Engineering Center, Mitsubishi Electric Corp.,

• Yamanishi Ken-ichiro

  Manufacturing Engineering Center Mitsubishi Electric Corp.

• Ohnishi Hiroshi

  Manufacturing Engineering Center Mitsubishi Electric Corp.

• Kusakabe Yoshihiko

  Manufacturing Engineering Center Mitsubishi Electric Corp.

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