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NCRI, Center for Electron Emission Source, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea | 論文著者
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Yu SeGi
NCRI, Center for Electron Emission Source, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea
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Heo Jungna
NCRI, Center for Electron Emission Source, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea
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Kim Jong
NCRI, Center for Electron Emission Source, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea
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Kang Jeongho
NCRI, Center for Electron Emission Source, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea
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Choi Yongsoo
NCRI, Center for Electron Emission Source, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea
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Yi Whikun
NCRI, Center for Electron Emission Source, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea
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Jeong Taewon
NCRI, Center for Electron Emission Source, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea