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Hebei Semiconductor Research Institute, Shijiazhuang 050051, P.O.B. 179, Hebei, P.R. China | 論文著者
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Zhou Ming-Hui
Hebei Semiconductor Research Institute, Shijiazhuang 050051, P.O.B. 179, Hebei, P.R. China
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Lang Xiu-Lan
Hebei Semiconductor Research Institute, Shijiazhuang 050051, P.O.B. 179, Hebei, P.R. China
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Liang Chun-Guang
Hebei Semiconductor Research Institute, Shijiazhuang 050051, P.O.B. 179, Hebei, P.R. China
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He Yu-Zhang
Hebei Semiconductor Research Institute, Shijiazhuang 050051, P.O.B. 179, Hebei, P.R. China
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Wang Zhan-Li
Hebei Semiconductor Research Institute, Shijiazhuang 050051, P.O.B. 179, Hebei, P.R. China