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Advanced Materials Research Center, Samsung Advanced Institute of Technology, Samsung Electronics, Yongin, Gyeonggi 446-712, Republic of Korea | 論文著者
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Ahn Kyunghan
Advanced Materials Research Center, Samsung Advanced Institute of Technology, Samsung Electronics, Yongin, Gyeonggi 446-712, Republic of Korea
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Yeon Dong-Hee
Advanced Materials Research Center, Samsung Advanced Institute of Technology, Samsung Electronics, Yongin, Gyeonggi 446-712, Republic of Korea
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Hwang Sungwoo
Advanced Materials Research Center, Samsung Advanced Institute of Technology, Samsung Electronics, Yongin, Gyeonggi 446-712, Republic of Korea
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Kim Sang
Advanced Materials Research Center, Samsung Advanced Institute of Technology, Samsung Electronics, Yongin, Gyeonggi 446-712, Republic of Korea
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Kim Hyun-Sik
Advanced Materials Research Center, Samsung Advanced Institute of Technology, Samsung Electronics, Yongin, Gyeonggi 446-712, Republic of Korea
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Lee Kyu
Advanced Materials Research Center, Samsung Advanced Institute of Technology, Samsung Electronics, Yongin, Gyeonggi 446-712, Republic of Korea
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Lee Sang
Advanced Materials Research Center, Samsung Advanced Institute of Technology, Samsung Electronics, Yongin, Gyeonggi 446-712, Republic of Korea