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Univ. Cambridge Cambridge Gbr | 論文
- Ni基超合金の微視的き裂の挙動に関する統計的性質
- Characterization of GaAs Surfaces Treated with Remote PH_3 Plasma
- Characterization of InGaAs Phosphidized by a Plasma Process
- Behavior of Electron Traps in Phosphidized GaAs by Nitrogen Plasma Treatment
- Improvement of Coupling Efficiency for Passive Alignment of Stacked Multifiber Tapes to a Vertical-Cavity Surface-Emitting Laser Array
- Preparation of Bi-Iron-Garnet Films on Platinized Si Substrate with Bi-Substituted Y-Iron-Garnet Template Layer (レーザーによる薄膜形成と制御小特集号)
- Improvement on Coupling Efficiency for Passive Alignment of Stacked Multi-Fiber Tapes to a Vertical-Cavity Surface-Emitting Laser Array
- Mechanism of Stoichiometric Deposition of Volatile Elements in Multimetal-Oxide Films Prepared by Pulsed Laser Ablation
- Deep Electron Traps in n-InP Induced by Plasma Exposure
- Effect of Hydrogen Plasma Treatment on n-InP Surfaces
- Characteristics of Electron Trap Induced in n-InP by Hydrogen Plasma Exposure
- Surface-Emitting Laser with a Common-Anode Configuration for Application to the Photonic Parallel Memory
- Effect of Phosphine on Plasma-Induced Traps in n-InP
- Measurement of Surface Fermi Level in Phosphidized GaAs
- Second-Order Piezoresistance Coefficients of p-Type Silicon
- Evidence for Phosphorus Passivation of Plasma-Induced Damage at GaAs Surface Probed by EL2 Traps
- Second-Order Piezoresistance Coefficients of n-Type Silicon
- Temperature Profile during Spontaneous Aperiodic Optical Bistability Oscillations in Lead Magnesium Niobate
- Single Electron Charging Phenomena in Silicon Nano-Pillars With and Without Silicon Nitride Tunnel Barriers
- Application of Focused Ion Beam Implantation to Produce Gallium Arsenide Metal Semiconductor Field-Effect Transistors with a Novel Doping Profile