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Ulsi Process Technology Development Center Matsushita Electric Industrial Co. Ltd. | 論文
- Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WN_x Gate Formation
- Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WNx Gate Formation
- Contact Hole Etch Scaling toward 0.1 μm
- Spatial and Temporal Behavior of Radicals in Inductively Coupled Plasm for SiO_2 Etching
- Highly Selective SiO2 Etching Using Inductively Coupled Plasma Source with a Multispiral Coil
- Advanced Thermal Improvement Method for Chemically Amplified Resists
- Overview and Future Challenge of FeRAM Technologies
- Transformation of Dense Contact Holes during SiO2 Etching