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Toyota Technological Institute | 論文
- Inter-Dot Distance Dependence of Photoluminescence Properties in CdSe Quantum Dot Systems
- Evolution of energy transfer process between quantum dots of two different sizes during the evaporation of solvent
- Improved Height Measurement of Single CdSe Colloidal Quantum Dots by Contact-Mode Atomic Fore Microscopy Using Carbon Nano-Tube Tips ; for the Investigation of Current-Voltage Characteristics
- Room-Temperature Annealing Effects on Radiation-Induced Defects in InP Crystals and Solar Cells
- Development of MEMS Capacitive Sensor Using a MOSFET Structure
- Fabrication of MOSFET Capacitive Sensor using Spray Coating Method
- Thick Plate Subjected to Torsional Impact by a Rigid Circular Cylinder
- Channeling Radiation from 1 MeV Electrons
- Metal Mold Manufacturing of Fresnel Lens by Use of Micro Grooving Technology
- Enhancement of the 15.4 nm Line of the Lithiumlike Aluminum Recombining Plasma Laser using a Half Cavity
- Enhancement of Soft X-Ray Emission from Al Plasma by Pulse Train Laser Irradiation
- Characteristics of Alpha-Radiation-Induced Deep Level Defects in p-Type InP Grown by Metal-Organic Chemical Vapor Deposition
- Observation of Soft X-Ray Amplified Spontaneous Emission in a Recombining Si Plasma Pumped by a Low-Power Laser
- Layer-By-Layer Controlled Digital Etching by Means of an Electron-Beam-Excited Plasma System : Etching and Deposition Technology
- Layer-By-Layer Controlled Digital Etching by Means of an Electron-Beam-Excited Plasma System
- Soft X-Ray Lasing in an Al Plasma Produced by a 6 J Laser
- New High Current Low Energy Ion Source
- Iron Concentrations in GaAs Diffused from a Spin-on Film
- Typical Characteristics of Optical Thin Film Filters with Metallic Nanoparticles
- Precise Mark Shape Control in Mark Length Recording on Magnetooptical Disk